Search IP

Home > Search IP

IP Category

Browser by Category
Browser by Foundry
Browser by Technology

Select Category

Physical Library
  • 기업 IP
  • 대학·연구소 IP
  • N관련된 신규용역가능
  • M수정/가공 판매가능
  • T기술지원 가능
  • P현 상태로만 판매가능
total: 52/813 IP Cores
    • 대학·연구소 IP
    • P

    4H-SiC MOSFET-based ESD Protection Device with Improved Snapback using body floating for 70V application

    The circuit has effective ESD performance by using MOSFET based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1077 | 2021-03-10

    • 대학·연구소 IP
    • P

    4H-SiC MOSFET-based ESD Protection Device with Improved Holding Voltage using gate floating for 80V application

    The circuit has effective ESD performance by using MOSFET based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1076 | 2021-03-10

    • 대학·연구소 IP
    • P

    4H-SiC MOSFET-based ESD protection device with improved snapback using gate body triggering technology for 100V application

    The circuit has effective ESD performance by using MOSFET based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1075 | 2021-03-10

    • 대학·연구소 IP
    • P

    4H-SiC MOSFET-based ESD protection device with improved snapback using gate body triggering technology for 90V application

    The circuit has effective ESD performance by using MOSFET based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1074 | 2021-03-10

    • 대학·연구소 IP
    • P

    4H-SiC MOSFET-based 4-Stacked ESD protection device with improved snapback using segment topology for 450V application

    The circuit has effective ESD performance by using MOSFET based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1073 | 2021-03-10