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0.18um Embedded EEPROM, 1.8V, 64Kbyte, 12MHz
The embedded EEPROM IP supports 12MHz of read speed with 1.8V single power supply.
This provides the most competitive macro die size against others in the world at the same level of process.
CMOS logic 0.18um process of Magnachip foundry fab is used.
Furthermore, this eNVN IP guarantees 50K cycles of E/W endurance w..
KC006H0365 | 2013-05-07
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0.18um Embedded EEPROM, 1.8V, 32Kbyte, 12MHz
The embedded EEPROM IP supports 12MHz of read speed with 1.8V single power supply.
This provides the most competitive macro die size against others in the world at the same level of process.
CMOS logic 0.18um process of Magnachip foundry fab is used.
Furthermore, this eNVN IP guarantees 50K cycles of E/W endurance w..
KC006H0364 | 2013-05-07
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0.18um Embedded EEPROM IP, 1.8V, 16Kbyte, 16MHz
The embedded EEPROM IP supports 16MHz of read speed with 1.8V single power supply.
This provides the most competitive macro die size against others in the world at the same level of process.
CMOS logic 0.18um process of Magnachip foundry fab is used.
Furthermore, this eNVN IP guarantees 50K cycles of E/W endurance w..
KC006H0363 | 2013-05-07
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0.18um Embedded EEPROM IP, 1.8V, 8Kbyte, 16MHz
The embedded EEPROM IP supports 16MHz of read speed with 1.8V single power supply.
This provides the most competitive macro die size against others in the world at the same level of process.
CMOS logic 0.18um process of Magnachip foundry fab is used.
Furthermore, this eNVN IP guarantees 50K cycles of E/W endurance w..
KC006H0362 | 2013-05-07
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0.18um Embedded EEPROM IP, 1.8V, 4Kbyte, 16MHz
The embedded EEPROM IP supports 16MHz of read speed with 1.8V single power supply.
This provides the most competitive macro die size against others in the world at the same level of process.
CMOS logic 0.18um process of Magnachip foundry fab is used.
Furthermore, this eNVN IP guarantees 50K cycles of E/W endurance w..
KC006H0361 | 2013-05-07