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  • 기업 IP
  • 대학·연구소 IP
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total: 847/847 IP Cores
    • 대학·연구소 IP
    • P

    High Resolution Analog-Digital Converter for Gas Sensor Interface

    This discrete-time 3rd order delta-sigma analog-digital converter is supplied by 3.3V, and shows 16bit resolution. The measured effective number of bits(ENOB) is 15bit. The sampling rate is 500kS/s. Digital control block is added to improve robustness of power variation of amplifier of delta-sigma ADC. High SNDR is ach..

    KU199H1081 | 2021-04-05

    • 대학·연구소 IP
    • P

    Negative Charge Pump for Gas Sensor

    The NCP20 is designed to provide a regulated negative voltage from a single positive voltage that is origin from LDO’s Output. The NCP20 operates from a single 2V to 4.4V Voltage and provides an adjustable output voltage from 1.56V to 7.35V . Three external capacitors are required: a 1µF input capacitor, 1nF out..

    KU199H1080 | 2021-04-05

    • 대학·연구소 IP
    • P

    4H-SiC MOSFET-based ESD Protection Device with Improved Snapback using body floating for 70V application

    The circuit has effective ESD performance by using MOSFET based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1077 | 2021-03-10

    • 대학·연구소 IP
    • P

    4H-SiC MOSFET-based ESD Protection Device with Improved Holding Voltage using gate floating for 80V application

    The circuit has effective ESD performance by using MOSFET based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1076 | 2021-03-10

    • 대학·연구소 IP
    • P

    4H-SiC MOSFET-based ESD protection device with improved snapback using gate body triggering technology for 100V application

    The circuit has effective ESD performance by using MOSFET based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1075 | 2021-03-10