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SCR-based ESD protection device with high holding voltage using segment topology for 150V application in 4H-SiC process
The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).
KU302H1047 | 2020-12-04
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SCR-based ESD protection device with high holding voltage using N-drift region for 120V application in 4H-SiC process
The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).
KU302H1046 | 2020-12-04
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NMOSFET-based ESD protection device with improved snapback using gate body floating technology for 100V application in 4H-SiC process
The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).
KU302H1045 | 2020-12-04
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High accuracy Bandgap reference circuit
The HTL065S1P2BGR is a 1.2 V band gap core reference designed specifically for applications experiencing heavy dynamic supply variations, such as data converter references. The HTL065S1P2BGR is also suitable for a variety of general-purpose applications.
KC581H1044 | 2020-11-05
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150mA LDO
The HTL065S1P5O150 is a linear voltage regulator for embedded application that requires an internal power supply lower than the external power supply voltage. It is operated by 5V and delivers a steady output of 1.5V. The HTL065S1P5O150 is also suitable for a variety of general-purpose applications.
KC581H1043 | 2020-11-05